FDS8876 |
RFQ for FDS8876 Required Field |
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| Technical/Catalog Information | FDS8876 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12.5A |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 12.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1650pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS8876 FDS8876 |
| Product | Manufacturers | Pack | D/C |
| FDS8876 | - | SMD | 2004 |
Typical Application |
Features |
| DC/DC converters | rDS(ON) = 8.2mΩ , VGS = 10V, ID = 12.5Ar DS(ON)= 10.2mΩ , VGS = 4.5V, ID = 11.4AHigh performance trench technology for extremely low rDS(ON) Low gate chargeHigh power and current handling capability |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 30 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W) |
12.5 | A |
| Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W) | 11.4 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy ( Note 1) | 105 | mJ |
| PD | Power dissipation | 2.5 | W |
| Derate above 25oC | 20 | mW/oC | |
| TJ, TSTG | Operating and Storage Temperature | -55 to 150 | oC |
| Models | MFG | Pack |
| FDS006S | ||
| FDS100AA40 | ||
| FDS100AA60 | ||
| FDS100BA60 | ||
| FDS100CA100 | ||
| FDS100CA120 | ||
| FDS151 | ||
| FDS1764A | ||
| FDS200 | ||
| FDS2070N3 | 02+ | |
| FDS2070N7 | SOP8 | |
| FDS2170N3 | 01+ | |
| FDS2170N7 | ||
| FDS2180AC | ||
| FDS2370N7 | ||
| FDS24U16 | ||
| FDS2503N | ||
| FDS2504P | ||
| FDS2506P | ||
| FDS2508P |
